2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle
From MaRDI portal
Publication:658896
DOI10.1016/j.cma.2010.06.005zbMath1231.78043OpenAlexW2077314539MaRDI QIDQ658896
Vittorio Romano, Alexander Rusakov
Publication date: 8 February 2012
Published in: Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.cma.2010.06.005
Statistical mechanics of semiconductors (82D37) Motion of charged particles (78A35) Finite volume methods, finite integration techniques applied to problems in optics and electromagnetic theory (78M12)
Related Items (9)
A moment model for phonon transport at room temperature ⋮ Moment model and boundary conditions for energy transport in the phonon gas ⋮ Charge Transport in Graphene including Thermal Effects ⋮ Existence and uniqueness for a two-temperature energy-transport model for semiconductors ⋮ Hydrodynamic modeling of hot-carrier effects in a PN junction solar cell ⋮ Electron-phonon interactions in the Fermi-Dirac spintronics ⋮ Electro-thermo-chemical computational models for 3D heterogeneous semiconductor device simulation ⋮ Group classification of an energy transport model for semiconductors with crystal heating ⋮ Generation-recombination Models in the Matrix Kinetic Approach to Spintronics
Cites Work
- Unnamed Item
- Unnamed Item
- A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
- Electron-phonon hydrodynamical model for semiconductors
- Multirate linear multistep methods
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- Multirate ROW methods and latency of electric circuits
- An energy-transport model for semiconductors derived from the Boltzmann equation.
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- The maximum entropy principle hydrodynamical model for holes in silicon semiconductors: the case of the warped bands
- Numerical Coupling of Electric Circuit Equations and Energy-Transport Models for Semiconductors
- TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
- Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
- On a hierarchy of macroscopic models for semiconductors
This page was built for publication: 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle