A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET

DOI10.1016/S0010-4655(02)00368-5zbMath0994.82501MaRDI QIDQ696728

Tien-Sheng Chao, S. M. Sze, Yiming Li

Publication date: 12 September 2002

Published in: Computer Physics Communications (Search for Journal in Brave)

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Related Items (3)

A novel parallel adaptive Monte Carlo method for nonlinear Poisson equation in semiconductor devices ⋮ A two-dimensional thin-film transistor simulation using adaptive computing technique ⋮ A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation

Cites Work

• Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
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