Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire

DOI10.1007/s00161-013-0296-7zbMath1343.82075OpenAlexW2018068080MaRDI QIDQ738065

Orazio Muscato, Vincenza Di Stefano

Publication date: 15 August 2016

Published in: Continuum Mechanics and Thermodynamics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s00161-013-0296-7

zbMATH Keywords

maximum entropy principlehydrodynamic modelsilicon nanowiresSchrödinger-Poisson-Boltzmann system

Mathematics Subject Classification ID

Statistical mechanics of nanostructures and nanoparticles (82D80)

Related Items (7)

Electron transport in silicon nanowires having different cross-sections ⋮ Non-Parabolic Band Hydrodynamic Model for Silicon Quantum Wires ⋮ Electrothermal Transport in Silicon Carbide Semiconductors via a Hydrodynamic Model ⋮ A benchmark study of the signed-particle Monte Carlo algorithm for the Wigner equation ⋮ A hierarchy of hydrodynamic models for silicon carbide semiconductors ⋮ An improved 2D-3D model for charge transport based on the maximum entropy principle ⋮ Wigner Monte Carlo simulation without discretization error of the tunneling rectangular barrier

Cites Work

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• A variance-reduced electrothermal Monte Carlo method for semiconductor device simulation
• An energy transport model describing heat generation and conduction in silicon semiconductors
• Properties of the steady state distribution of electrons in semiconductors
• The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
• Seebeck effect in silicon semiconductors
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
• Heat generation and transport in nanoscale semiconductor devices via Monte Carlo and hydrodynamic simulations
• Hydrodynamic modeling of the electro-thermal transport in silicon semiconductors
• Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
• Monte Carlo evaluation of the transport coefficients in a n⁺ – n – n⁺ silicon diode
• Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle
• Numerical study of the systematic error in Monte Carlo schemes for semiconductors
• Time step truncation in direct simulation Monte Carlo for semiconductors
• Theoretical foundations for tail electron hydrodynamical models in semiconductors

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