Steady hydrodynamic model of semiconductors with sonic boundary and transonic doping profile

DOI10.1016/j.jde.2020.06.022OpenAlexW3036816309MaRDI QIDQ778204

Ming Mei, Liang Chen, Guojing Zhang, Kai-Jun Zhang

Publication date: 2 July 2020

Published in: Journal of Differential Equations (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jde.2020.06.022

zbMATH Keywords

Euler-Poisson equationssonic boundaryhydrodynamic model of semiconductorssubsonic-dominatedsupersonic-dominatedtransonic doping profile

Mathematics Subject Classification ID

PDEs in connection with fluid mechanics (35Q35) Degenerate elliptic equations (35J70) Free boundary problems for PDEs (35R35) Existence, uniqueness, and regularity theory for compressible fluids and gas dynamics (76N10) PDEs in connection with semiconductor devices (35Q81)

Related Items (10)

Radially symmetric spiral flows of the compressible Euler-Poisson system for semiconductors ⋮ Structural Stability of Radial Interior Subsonic Steady-States to n-D Euler-Poisson System of Semiconductor Models with Sonic Boundary ⋮ Structural stability of subsonic steady states to the hydrodynamic model for semiconductors with sonic boundary ⋮ Quasi-Neutral Limit to Steady-State Hydrodynamic Model of Semiconductors with Degenerate Boundary ⋮ Transonic shocks for 2D steady exothermically reacting Euler flows in a finite nozzle ⋮ Subsonic steady-states for bipolar hydrodynamic model for semiconductors ⋮ Radial solutions of hydrodynamic model of semiconductors with sonic boundary ⋮ Smooth Transonic Steady States of Hydrodynamic Model for Semiconductors ⋮ Nonlinear structural stability and linear dynamic instability of transonic steady-states to hydrodynamic model for semiconductors ⋮ Transonic Steady-States of Euler--Poisson Equations for Semiconductor Models with Sonic Boundary

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