Analysis of a two-grid method for semiconductor device problem

DOI10.1007/s10483-021-2696-5zbMath1496.65151OpenAlexW3120702218MaRDI QIDQ824069

Yanping Chen, Yunqing Huang, Ying Liu, Qingfeng Li

Publication date: 14 December 2021

Published in: AMM. Applied Mathematics and Mechanics. (English Edition) (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s10483-021-2696-5

zbMATH Keywords

Galerkin methodmixed finite element methodtwo-grid methodsemiconductor device\(L^q\) error estimate

Mathematics Subject Classification ID

Numerical computation of solutions to systems of equations (65H10) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Mesh generation, refinement, and adaptive methods for boundary value problems involving PDEs (65N50) Error bounds for initial value and initial-boundary value problems involving PDEs (65M15) Multigrid methods; domain decomposition for initial value and initial-boundary value problems involving PDEs (65M55) Initial-boundary value problems for PDEs of mixed type (35M13) PDEs in connection with semiconductor devices (35Q81)

Related Items (2)

Efficient algorithm based on two-grid method for semiconductor device problem ⋮ Superconvergence analysis of finite element method for nonlinear semiconductor device problem

Cites Work

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