An energy localization principle and its application to fast kinetic Monte Carlo simulation of heteroepitaxial growth

DOI10.1016/j.jmps.2008.11.007zbMath1170.74359OpenAlexW1964559549MaRDI QIDQ835874

Tim P. Schulze, Peter Smereka

Publication date: 31 August 2009

Published in: Journal of the Mechanics and Physics of Solids (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jmps.2008.11.007

zbMATH Keywords

heteroepitaxykinetic Monte Carlostrained thin films

Mathematics Subject Classification ID

Related Items (5)

Kinetic Monte Carlo simulation of strained heteroepitaxial growth with intermixing ⋮ Massively parallel kinetic Monte Carlo simulations of charge carrier transport in organic semiconductors ⋮ Approximating Off-Lattice Kinetic Monte Carlo ⋮ Fast Kinetic Monte Carlo Simulations Using Hash Table Based Caching with Applications to Nanowire Growth and Sintering ⋮ Analysis of an energy localization approximation applied to three-dimensional kinetic Monte Carlo simulations of heteroepitaxial growth

Cites Work

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• Exact Artificial Boundary Conditions for Continuum and Discrete Elasticity
• Thin Film Materials
• A Multigrid-Fourier Method for the Computation of Elastic Fields with Application to Heteroepitaxy
• On Saint Venant’s principle

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