A nonlinear multigrid method for one-dimensional semiconductor device simulation: Results for the diode

DOI10.1016/0377-0427(90)90010-WzbMath0696.65086MaRDI QIDQ911239

P. W. Hemker

Publication date: 1990

Published in: Journal of Computational and Applied Mathematics (Search for Journal in Brave)

zbMATH Keywords

convergenceNewton iterationmultigrid methoddiodeScharfetter-Gummel discretizationGauss-Seidel relaxationiteration errorone-dimensional semiconductor device simulation

Mathematics Subject Classification ID

Iterative numerical methods for linear systems (65F10) Technical applications of optics and electromagnetic theory (78A55) Partial differential equations of mathematical physics and other areas of application (35Q99) Applications to the sciences (65Z05) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22)

Related Items (3)

Adaptive multigrid applied to a bipolar transistor problem ⋮ A physics-based strategy for choosing initial iterate for solving drift-diffusion equations ⋮ A fast, spectrally accurate homotopy based numerical method for solving nonlinear differential equations

Cites Work

• Semiconductor device modelling from the numerical point of view
• Unnamed Item

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