The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions
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Publication:936580
DOI10.1016/j.jmaa.2008.05.058zbMath1166.35309OpenAlexW2066596091MaRDI QIDQ936580
Chunling Cao, Hongjun Yuan, Song Zhe Lian, Wen-jie Gao
Publication date: 14 August 2008
Published in: Journal of Mathematical Analysis and Applications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jmaa.2008.05.058
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Cites Work
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- An Asymptotic Analysis of a Transient p-n-Junction Model
- Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
- Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
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