The limiting problem of the drift-diffusion-Poisson model with discontinuous p-n-junctions

DOI10.1016/j.jmaa.2008.05.058zbMath1166.35309OpenAlexW2066596091MaRDI QIDQ936580

Chunling Cao, Hongjun Yuan, Song Zhe Lian, Wen-jie Gao

Publication date: 14 August 2008

Published in: Journal of Mathematical Analysis and Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jmaa.2008.05.058

zbMATH Keywords

elliptic-parabolic systemdiscontinuous doping profile

Mathematics Subject Classification ID

Cites Work

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• Compact sets in the space \(L^ p(0,T;B)\)
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• Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
• The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
• QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
• An Asymptotic Analysis of a Transient p-n-Junction Model
• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
• Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile

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