An accelerated monotone iterative method for the quantum-corrected energy transport model

DOI10.1016/j.jcp.2008.03.003zbMath1151.82419OpenAlexW2035645376MaRDI QIDQ939488

Jinn-Liang Liu, Ren-Chuen Chen

Publication date: 22 August 2008

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jcp.2008.03.003

zbMATH Keywords

convergence analysismonotone iterative methodsemiconductor devicequantum energy transport model

Mathematics Subject Classification ID

Stability and convergence of numerical methods for boundary value problems involving PDEs (65N12) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of semiconductors (82D37)

Related Items (4)

A quantum corrected Poisson-Nernst-Planck model for biological ion channels ⋮ Numerical methods for the Poisson-Fermi equation in electrolytes ⋮ Energy transport in semiconductor devices ⋮ Discrete monotone method for space-fractional nonlinear reaction-diffusion equations

Cites Work

• An entropic quantum drift-diffusion model for electron transport in resonant tunneling diodes
• An accelerated algorithm for 2D simulations of the quantum ballistic transport in nanoscale MOSFETs
• Accelerated monotone iterative methods for finite difference equations of reaction-diffusion
• Quantum moment hydrodynamics and the entropy principle
• An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices
• Monotone iterative methods for the adaptive finite element solution of semiconductor equations
• Quantum-corrected drift-diffusion models for transport in semiconductor devices
• A quantum corrected energy-transport model for nanoscale semiconductor devices
• Accelerated monotone iterations for numerical solutions of nonlinear elliptic boundary value problems
• On accelerated monotone iterations for numerical solutions of semilinear elliptic boundary value problems
• Conditioning of the Steady State Semiconductor Device Problem
• An Approximate Newton Method for the Solution of the Basic Semiconductor Device Equations
• The Stationary Current-Voltage Characteristics of the Quantum Drift-Diffusion Model
• A REVIEW ON THE QUANTUM DRIFT DIFFUSION MODEL
• Semiconductor Simulations Using a Coupled Quantum Drift‐Diffusion Schrödinger–Poisson Model

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