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Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor - MaRDI portal

Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor

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Publication:941774

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DOI10.1007/S11431-008-0065-1zbMath1144.78006OpenAlexW2174180641MaRDI QIDQ941774

DongSan Li, Yi-Ran An, Yao-Song Chen, YiJia Lu

Publication date: 2 September 2008

Published in: Science in China. Series E (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11431-008-0065-1

zbMATH Keywords

electron temperature electron density inductively coupled plasma power deposition

Mathematics Subject Classification ID

Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of plasmas (82D10) Electro- and magnetostatics (78A30)

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