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Novel electrical characterization for advanced CMOS gate dielectrics - MaRDI portal

Novel electrical characterization for advanced CMOS gate dielectrics

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Publication:954418

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DOI10.1007/S11432-008-0068-3zbMath1210.94127OpenAlexW2058508722MaRDI QIDQ954418

Tian-Ping Ma

Publication date: 10 November 2008

Published in: Science in China. Series F (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11432-008-0068-3

zbMATH Keywords

electrical characterization gate dielectrics IETS MOS device PASHEI

Mathematics Subject Classification ID

Circuits, networks (94C99) Statistical mechanics of semiconductors (82D37)

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