Device scaling effect on the spectral-directional absorptance of Wafer's front side

DOI10.1016/j.ijheatmasstransfer.2008.03.003zbMath1154.78302OpenAlexW2152336466MaRDI QIDQ955795

Pei-Feng Hsu, Kang Fu, Zhuomin M. Zhang, Paul J. Timans, Yu-Bin Chen

Publication date: 20 November 2008

Published in: International Journal of Heat and Mass Transfer (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.ijheatmasstransfer.2008.03.003

zbMATH Keywords

rapid thermal processingrigorous coupled-wave analysisfinite-difference time-domainperiodic nano-structures

Mathematics Subject Classification ID

Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Waves and radiation in optics and electromagnetic theory (78A40)

Cites Work

• Unnamed Item
• Unnamed Item

This page was built for publication: Device scaling effect on the spectral-directional absorptance of Wafer's front side