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Partly three-dimensional global modeling of a silicon Czochralski furnace. I: Principles, formulation and implementation of the model

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Publication:978361
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DOI10.1016/j.ijheatmasstransfer.2005.04.031zbMath1189.76698OpenAlexW2027015629MaRDI QIDQ978361

Lijun Liu, Koichi Kakimoto

Publication date: 24 June 2010

Published in: International Journal of Heat and Mass Transfer (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.ijheatmasstransfer.2005.04.031


zbMATH Keywords

radiationCzochralski methodcomputer simulationglobal modelingsemiconducting silicon


Mathematics Subject Classification ID

Stefan problems, phase changes, etc. (80A22) Multiphase and multicomponent flows (76T99) Waves and radiation in optics and electromagnetic theory (78A40)


Related Items (2)

Application of the proper orthogonal decomposition to turbulent convective flows in a simulated Czochralski system ⋮ Large-eddy simulation of melt turbulence in a 300-mm Cz-Si crystal growth




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