Finite volume element approximation and analysis for a kind of semiconductor device simulation
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Publication:980422
DOI10.1007/s12190-009-0279-9zbMath1195.82096OpenAlexW1983391644MaRDI QIDQ980422
Publication date: 29 June 2010
Published in: Journal of Applied Mathematics and Computing (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s12190-009-0279-9
Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Statistical mechanics of semiconductors (82D37) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60)
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Cites Work
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- On the finite volume element method
- On first and second order box schemes
- Analysis of a finite element method for the drift-diffusion semiconductor device equations: The multidimensional case
- Finite difference fractional step methods for the transient behavior of a semiconductor device
- On the Accuracy of the Finite Volume Element Method for Diffusion Equations on Composite Grids
- Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
- Consistency of Semiconductor Modeling: An Existence/Stability Analysis for the Stationary Van Roosbroeck System
- Some Error Estimates for the Box Method
- Time-dependent solutions of a nonlinear system arising in semiconductor theory—II. Boundedness and periodicity
- On the Accuracy of the Finite Volume Element Method Based on Piecewise Linear Polynomials
- Error Estimates for a Finite Volume Element Method for Elliptic PDEs in Nonconvex Polygonal Domains
- Error estimates in $L^2$, $H^1$ and $L^\infty$ in covolume methods for elliptic and parabolic problems: A unified approach
- Finite Element Analysis of the One-Dimensional Full Drift-Diffusion Semiconductor Model
- Finite volume element approximations of nonlocal reactive flows in porous media