A compact quantum surface potential model for a MOSFET device

DOI10.1016/J.MCM.2009.08.023zbMath1193.82056OpenAlexW2094980659MaRDI QIDQ988450

Henok Abebe, Hedley C. Morris

Publication date: 26 August 2010

Published in: Mathematical and Computer Modelling (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.mcm.2009.08.023

zbMATH Keywords

analytic solutionquantum correctionsLambert functionMOSFET

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations
• Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling
• Semiconductor Simulations Using a Coupled Quantum Drift‐Diffusion Schrödinger–Poisson Model

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