Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs

DOI10.1016/J.MCM.2009.08.043zbMath1193.82055OpenAlexW1973024543MaRDI QIDQ988454

H. Børli, U. Monga, Tor A. Fjeldly

Publication date: 26 August 2010

Published in: Mathematical and Computer Modelling (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.mcm.2009.08.043

zbMATH Keywords

conformal mappingdevice modelingcapacitance modelingcurrent modelingnanoscale MOSFETsubthreshold slope

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Applications of design theory to circuits and networks (94C30)

Cites Work

• Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs
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