Relaxation limit and initial layer to hydrodynamic models for semiconductors

DOI10.1016/j.jde.2010.06.008zbMath1214.35052OpenAlexW2075858134MaRDI QIDQ994298

Masahiro Suzuki, Shinya Nishibata

Publication date: 17 September 2010

Published in: Journal of Differential Equations (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jde.2010.06.008

zbMATH Keywords

stabilityexistenceasymptotic behaviourhydrodynamic modeldrift-diffusion modelstationary solutionsemiconductorssingular limit

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) PDEs in connection with optics and electromagnetic theory (35Q60) PDEs in connection with fluid mechanics (35Q35) Diffusion (76R50) Statistical mechanics of semiconductors (82D37) Magnetohydrodynamics and electrohydrodynamics (76W05)

Related Items (10)

Existence and uniqueness of steady states to semiconductor bipolar full quantum hydrodynamic model ⋮ Initial layer and relaxation limit of non-isentropic compressible Euler equations with damping ⋮ On the steady state relativistic Euler-Poisson equations ⋮ Viscous shock profile and singular limit for hyperbolic systems with Cattaneo's law ⋮ Asymptotic limits of solutions to the initial boundary value problem for the relativistic Euler-Poisson equations ⋮ Relaxation limit of the one-dimensional bipolar Euler-Poisson system in the bound domain ⋮ Asymptotic stability of steady state solutions for the relativistic Euler-Poisson equations ⋮ Relaxation-time limit in the multi-dimensional bipolar nonisentropic Euler-Poisson systems ⋮ Relaxation limit in bipolar semiconductor hydrodynamic model with non-constant doping profile ⋮ Combined relaxation and non-relativistic limit of non-isentropic Euler–Maxwell equations

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• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors

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