Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation
type: Item
instance of: scholarly article
title: Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation
zbMATH Open document ID: 1170.35013
author: Jinmyong Ri
author: Feimin Huang
published in: Journal of Differential Equations
publication date: 2009-03-17T00:00:00Z
Mathematics Subject Classification ID: 35B25
Mathematics Subject Classification ID: 35B40
Mathematics Subject Classification ID: 35K57
Mathematics Subject Classification ID: 82D37
Mathematics Subject Classification ID: 35B05
zbMATH DE Number: 5529540
zbMATH Keywords: finite speed of propagation
zbMATH Keywords: evolution of support
zbMATH Keywords: discontinuous sign-changing doping profile
MaRDI profile type: Publication
full work available at URL: j.jde.2008.10.013
OpenAlex ID: W1991775546
cites work: Q3961220
cites work: Local Vanishing Properties of Solutions of Elliptic and Parabolic Quasilinear Equations
cites work: Space localization and uniqueness of solutions of a quasilinear parabolic system arising in semiconductor theory
cites work: On a quasilinear degenerate system arising in semiconductor theory. Part II: Localization of vacuum solutions
cites work: Q4244433
cites work: On the basic equations for carrier transport in semiconductors
cites work: Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
cites work: The initial time layer problem and the quasineutral limit in the semiconductor drift-diffusion model
cites work: Quasineutral limit of a standard drift diffusion model for semiconductors.
cites work: Quasineutral limit of a time-dependent drift-diffusion-Poisson model for p-n junction semiconductor devices
cites work: Quasi-hydrodynamic semiconductor equations
cites work: ON THE EXISTENCE AND UNIQUENESS OF TRANSIENT SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
cites work: Q4869443
cites work: A Nonlinear Drift ‐ Diffusion System with Electric Convection Arising in Electrophoretic and Semiconductor Modeling
cites work: A hierarchy of hydrodynamic models for plasmas. Quasi-neutral limits in the drift-diffusion equations
cites work: Q4023822
cites work: An Asymptotic Analysis of a Transient p-n-Junction Model
cites work: QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
cites work: Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile
DOI: 10.1016/J.JDE.2008.10.013
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description: scientific article; zbMATH DE number 5529540