A finite element formulation for the hydrodynamic semiconductor device equations
type: Item
instance of: scholarly article
title: A finite element formulation for the hydrodynamic semiconductor device equations
zbMATH Open document ID: 0786.76050
DOI: 10.1016/0045-7825(93)90180-6
author: N. R. Aluru
author: R. J. G. Goossens
author: Arthur Raefsky
author: P. M. Pinsky
author: Kincho H. Law
author: Robert W. Dutton
published in: Computer Methods in Applied Mechanics and Engineering
publication date: 1994-04-27T00:00:00Z
review text: (From the authors' abstract.) A new formulation employing the Galerkin/least-squares finite element method is presented for the simulation of the hydrodynamic model of semiconductor devices. Numerical simulations are performed on the coupled Poisson and hydrodynamic equations for one-carrier devices. Numerical results are presented for one-dimensional and two-dimensional one-carrier \(n^ +-n-n^ +\).
reviewed by: Thomas Sonar
Mathematics Subject Classification ID: 76M10
Mathematics Subject Classification ID: 76N99
Mathematics Subject Classification ID: 78A55
zbMATH DE Number: 473274
zbMATH Keywords: coupled Poisson and hydrodynamic equations
zbMATH Keywords: carrier devices
MaRDI profile type: Publication
full work available at URL: 0045-7825(93)90180-6
OpenAlex ID: W1967019100
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description: scientific article; zbMATH DE number 473274