A finite element formulation for the hydrodynamic semiconductor device equations
(From the authors' abstract.) A new formulation employing the Galerkin/least-squares finite element method is presented for the simulation of the hydrodynamic model of semiconductor devices. Numerical simulations are performed on the coupled Poisson and hydrodynamic equations for one-carrier devices. Numerical results are presented for one-dimensional and two-dimensional one-carrier \(n^ +-n-n^ +\).
coupled Poisson and hydrodynamic equations
scientific article; zbMATH DE number 473274