Finite element solutions to \(GaAs-AIAs\) quantum wells with connection matrices at heterojunctions
type: Item
instance of: scholarly article
title: Finite element solutions to \(GaAs-AIAs\) quantum wells with connection matrices at heterojunctions
zbMATH Open document ID: 0812.65111
author: Kelin J. Kuhn
author: Tsung-Lung Li
published in: Journal of Computational Physics
publication date: 1995-05-14T00:00:00Z
review text: The irreducible finite element method is developed to incorporate the interface connection matrices at the heterojunctions of quantum wells. For the \(GaAs-AIAs\) quantum well, the finite difference interface formulation must be used, and the relative errors are shown to be less than 10. This finite element method is applied to compare the electric field effects on the \(GaAs-AIAs\) quantum well modeled by the conventional, the effective-mass-dependent, and the energy-dependent connection matrices.
Mathematics Subject Classification ID: 65Z05
Mathematics Subject Classification ID: 65N25
Mathematics Subject Classification ID: 65N30
Mathematics Subject Classification ID: 35Q40
Mathematics Subject Classification ID: 81Q05
zbMATH DE Number: 702088
zbMATH Keywords: connection matrix
zbMATH Keywords: irreducible finite element method
zbMATH Keywords: quantum wells
zbMATH Keywords: electric field effects
reviewed by: L. Vázquez
MaRDI profile type: Publication
full work available at URL: jcph.1994.1196
OpenAlex ID: W2039043236
DOI: 10.1006/JCPH.1994.1196
description: scientific article; zbMATH DE number 702088