Finite element solutions to \(GaAs-AIAs\) quantum wells with connection matrices at heterojunctions
The irreducible finite element method is developed to incorporate the interface connection matrices at the heterojunctions of quantum wells. For the \(GaAs-AIAs\) quantum well, the finite difference interface formulation must be used, and the relative errors are shown to be less than 10. This finite element method is applied to compare the electric field effects on the \(GaAs-AIAs\) quantum well modeled by the conventional, the effective-mass-dependent, and the energy-dependent connection matrices.
scientific article; zbMATH DE number 702088