High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor
type: Item
instance of: scholarly article
title: High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor
zbMATH Open document ID: 0894.76072
DOI: 10.1016/S0893-9659(97)00069-4
author: Carlo Cercignani
author: Irene M. Gamba
author: C. David Levermore
published in: Applied Mathematics Letters
publication date: 1997-11-12T00:00:00Z
Mathematics Subject Classification ID: 76P05
Mathematics Subject Classification ID: 78A55
zbMATH DE Number: 1085396
zbMATH Keywords: electron and hole gas
zbMATH Keywords: small devices
zbMATH Keywords: closures of moment equations
zbMATH Keywords: distribution function
zbMATH Keywords: moments
MaRDI profile type: Publication
cites work: The Boltzmann equation and its applications
cites work: Runaway Phenomena and Fluid Approximation Under High Fields in Semiconductor Kinetic Theory
cites work: Q4031474
cites work: Derivation of a hydrodynamic system hierarchy for semiconductors from the Boltzmann equation
cites work: An energy-transport model for semiconductors derived from the Boltzmann equation.
cites work: High electric field approximation to charge transport in semiconductor devices
cites work: Q3725757
cites work: The milne and kramers problems for the boltzmann equation of a hard sphere gas
cites work: Q3242006
full work available at URL: s0893-9659(97)00069-4
OpenAlex ID: W2132254595
description: scientific article; zbMATH DE number 1085396