A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations
type: Item
instance of: scholarly article
title: A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations
zbMATH Open document ID: 1008.82033
author: A. El Ayyadi
author: Pierre Degond
published in: Journal of Computational Physics
publication date: 2002-12-16T00:00:00Z
Mathematics Subject Classification ID: 82D37
zbMATH DE Number: 1845972
zbMATH Keywords: coupled Schrödinger drift-diffusion model
zbMATH Keywords: quantum semiconductor device simulations
zbMATH Keywords: resonant tunneling diode
MaRDI profile type: Publication
full work available at URL: jcph.2002.7122
OpenAlex ID: W2086729828
cites work: Erratum
cites work: Diffusion Approximation and Computation of the Critical Size
cites work: A hybrid kinetic-quantum model for stationary electron transport
cites work: On a hierarchy of macroscopic models for semiconductors
cites work: Coupling one-dimensional time-dependent classical and quantum transport models
cites work: On a one-dimensional Schrödinger-Poisson scattering model
cites work: Boundary layers and homogenization of transport processes
cites work: Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode
cites work: Mobility in High Electric Fields
cites work: On the viscosity and thermal conduction of fluids with multivalued internal energy
cites work: Existence of solutions and diffusion approximation for a model Fokker-Planck equation
cites work: Macroscopic models for semiconductor heterostructures
cites work: Knudsen layers from a computational viewpoint
cites work: A numerical method for computing asymptotic states and outgoing distributions for kinetic linear half-space problems.
cites work: Q4031474
cites work: Q4489937
cites work: Q4009097
cites work: SECOND ORDER BOUNDARY CONDITIONS FOR THE DRIFT-DIFFUSION EQUATIONS OF SEMICONDUCTORS
DOI: 10.1006/JCPH.2002.7122
Recommended article: Semiconductor Simulations Using a Coupled Quantum Drift‐Diffusion Schrödinger–Poisson Model
Recommended article: Quantum-corrected drift-diffusion models for transport in semiconductor devices
Recommended article: Q3618978
Recommended article: Approximate solutions to the quantum drift-diffusion model of semiconductors
Recommended article: New solutions for the quantum drift–diffusion model of semiconductors
Recommended article: A finite-volume scheme for the multidimensional quantum drift-diffusion model for semiconductors
Recommended article: A Scharfetter-Gummel Type Discretization of the Quantum Drift Diffusion Model
Recommended article: Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models
Recommended article: The Quantum Hydrodynamic Model for Semiconductor Devices
Recommended article: Numerical methods for a quantum drift-diffusion equation in semiconductor physics
description: scientific article; zbMATH DE number 1845972