Implicit-explicit multistep finite element methods for the semiconductor device problem.
type: Item
instance of: scholarly article
title: Implicit-explicit multistep finite element methods for the semiconductor device problem.
zbMATH Open document ID: 1040.65081
author: Wei Chen
published in: Journal of Systems Science and Complexity
publication date: 2003-01-01T00:00:00Z
review text: Optimal \(L^2\)-norm error estimates are derived for a numerical method to compute the transient behaviour of a semiconductor device. The Poisson equation for the electric potential is discretized by a finite element method (FEM), and electron and hole density equations are treated by implicit-explicit multistep FEMs.
reviewed by: Thomas Sonar
Mathematics Subject Classification ID: 65M60
Mathematics Subject Classification ID: 35Q60
Mathematics Subject Classification ID: 78M10
Mathematics Subject Classification ID: 82D37
Mathematics Subject Classification ID: 65B15
Mathematics Subject Classification ID: 65M12
Mathematics Subject Classification ID: 35J05
zbMATH DE Number: 1917034
zbMATH Keywords: semiconductor device
zbMATH Keywords: strong stability
zbMATH Keywords: multistep methods
zbMATH Keywords: finite element methods
zbMATH Keywords: error estimates
zbMATH Keywords: Poisson equation
zbMATH Keywords: implicit-explicit multistep methods
MaRDI profile type: Publication
description: scientific article; zbMATH DE number 1917034