Implicit-explicit multistep finite element methods for the semiconductor device problem.
Optimal \(L^2\)-norm error estimates are derived for a numerical method to compute the transient behaviour of a semiconductor device. The Poisson equation for the electric potential is discretized by a finite element method (FEM), and electron and hole density equations are treated by implicit-explicit multistep FEMs.
scientific article; zbMATH DE number 1917034