Numerical study of a three-dimensional chemical vapor deposition reactor with detailed chemistry
type: Item
instance of: scholarly article
title: Numerical study of a three-dimensional chemical vapor deposition reactor with detailed chemistry
zbMATH Open document ID: 0853.76091
author: Alexandre Ern
author: Vincent Giovangigli
author: Mitchell D. Smooke
published in: Journal of Computational Physics
publication date: 1997-01-13T00:00:00Z
review text: A numerical model of a three-dimensional, horizontal channel, chemical vapor deposition reactor is presented in order to study gallium arsenide growth from trimethylgallium and arsine source reactants. Fluid flow and temperature predictions inside the reactor are obtained using the vorticity-velocity form of the three-dimensional, steady-state Navier-Stokes equations coupled with a detailed energy balance equation inside the reactor and on its walls. Detailed gas phase and surface chemistry mechanisms are used to predict the chemical species profiles inside the reactor, the growth rate distribution on the substrate, and the level of carbon incorporation into the grown layer.
Mathematics Subject Classification ID: 76V05
Mathematics Subject Classification ID: 76M20
Mathematics Subject Classification ID: 92E20
zbMATH DE Number: 896660
zbMATH Keywords: iterative transport algorithms
zbMATH Keywords: thermal diffusion
zbMATH Keywords: multicomponent diffusion
zbMATH Keywords: central differences
zbMATH Keywords: FORTRAN libraries
zbMATH Keywords: gallium arsenide growth
zbMATH Keywords: trimethylgallium
zbMATH Keywords: vorticity-velocity form steady-state Navier-Stokes equations
zbMATH Keywords: energy balance equation
zbMATH Keywords: chemical species profiles
zbMATH Keywords: carbon incorporation
MaRDI profile type: Publication
full work available at URL: jcph.1996.0117
OpenAlex ID: W2060481278
DOI: 10.1006/JCPH.1996.0117
description: scientific article; zbMATH DE number 896660