Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
type: Item
instance of: scholarly article
title: Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
zbMATH Open document ID: 1263.82061
author: Vito Dario Camiola
author: Giovanni Mascali
author: Vittorio Romano
published in: Continuum Mechanics and Thermodynamics
publication date: 2013-03-04T00:00:00Z
review text: This paper deals with the simulation of a nanoscale double-gate MOSFET by means of an energy-transport subband model for semiconductors. A key role in this model is played by the moment system derived from the Schrödinger-Poisson-Boltzmann system. The proposed expression of the entropy combines quantum effects and semi-classical transport by weighting the contribution of each subband with the square modulus of the envelope functions arising from the Schrödinger-Poisson subsystem. Numerical simulations illustrate the results developed in the present paper.
reviewed by: Vicenţiu D. Rădulescu
Mathematics Subject Classification ID: 82D37
Mathematics Subject Classification ID: 82C70
Mathematics Subject Classification ID: 35Q82
Mathematics Subject Classification ID: 65M06
zbMATH DE Number: 6140928
zbMATH Keywords: quantum transport
zbMATH Keywords: semiconductors
zbMATH Keywords: hydrodynamical models
MaRDI profile type: Publication
full work available at URL: s00161-011-0217-6
OpenAlex ID: W1993133250
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DOI: 10.1007/S00161-011-0217-6
description: scientific article; zbMATH DE number 6140928