Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
This paper deals with the simulation of a nanoscale double-gate MOSFET by means of an energy-transport subband model for semiconductors. A key role in this model is played by the moment system derived from the Schrödinger-Poisson-Boltzmann system. The proposed expression of the entropy combines quantum effects and semi-classical transport by weighting the contribution of each subband with the square modulus of the envelope functions arising from the Schrödinger-Poisson subsystem. Numerical simulations illustrate the results developed in the present paper.
scientific article; zbMATH DE number 6140928
scientific article