Numerical simulation of the smooth quantum hydrodynamic model for semiconductor devices
type: Item
instance of: scholarly article
title: Numerical simulation of the smooth quantum hydrodynamic model for semiconductor devices
zbMATH Open document ID: 0966.76100
DOI: 10.1016/S0045-7825(99)00180-2
author: Carl L. Gardner
author: Christian Ringhofer
published in: Computer Methods in Applied Mechanics and Engineering
publication date: 2001-08-16T00:00:00Z
Mathematics Subject Classification ID: 76Y05
Mathematics Subject Classification ID: 76M20
Mathematics Subject Classification ID: 82D37
zbMATH DE Number: 1417821
zbMATH Keywords: electron tunneling
zbMATH Keywords: quantum hydrodynamic model
zbMATH Keywords: quantum transport effects
zbMATH Keywords: quantum semiconductor devices
zbMATH Keywords: conservative upwind discretization
zbMATH Keywords: resonant tunneling diode
MaRDI profile type: Publication
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cites work: Q4151274
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cites work: ON THE WELL‐POSEDNESS OF THE TWO‐DIMENSIONAL HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
cites work: Global approximate Newton methods
cites work: Q4221112
description: scientific article; zbMATH DE number 1417821