2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
type: Item
instance of: scholarly article
title: 2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods
zbMATH Open document ID: 1098.82033
author: A. Majorana
author: Chi-Wang Shu
author: J. A. Carrillo
author: Irene M. Gamba
published in: Journal of Computational Physics
publication date: 2006-04-28T00:00:00Z
Mathematics Subject Classification ID: 82D37
Mathematics Subject Classification ID: 82C70
Mathematics Subject Classification ID: 82-08
zbMATH DE Number: 5021341
zbMATH Keywords: Weighted essentially non-oscillatory schemes
zbMATH Keywords: Boltzmann transport equation
zbMATH Keywords: Semiconductor device simulation
zbMATH Keywords: MESFET
zbMATH Keywords: MOSFET
zbMATH Keywords: Direct Monte Carlo simulation
describes a project that uses: WENO
MaRDI profile type: Publication
full work available at URL: j.jcp.2005.09.005
OpenAlex ID: W2098149614
cites work: Q4451123
cites work: A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices: Performance and comparisons with Monte Carlo methods.
cites work: Analysis of a finite element method for the drift-diffusion semiconductor device equations: The multidimensional case
cites work: Q3358203
cites work: Q5702371
cites work: Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
cites work: A deterministic solution method for the coupled system of transport equations for the electrons and phonons in polar semiconductors
cites work: Behavior of the potential at the pn-junction for a model in semiconductor theory
cites work: Q5286428
cites work: Asymptotic behavior at the boundary of a semiconductor device in two space dimensions
cites work: Q3470840
cites work: Q5690874
cites work: Efficient implementation of weighted ENO schemes
cites work: Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver
cites work: A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices
cites work: Q3618986
cites work: Q4023822
cites work: Q4247279
cites work: Efficient implementation of essentially nonoscillatory shock-capturing schemes
cites work: Q4453504
DOI: 10.1016/J.JCP.2005.09.005
description: scientific article