A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation
type: Item
instance of: scholarly article
title: A hydrodynamical model for covalent semiconductors with a generalized energy dispersion relation
zbMATH Open document ID: 1307.78006
DOI: 10.1017/S0956792514000011
author: Vittorio Romano
author: Rosa Claudia Torcasio
author: Giuseppe Alì
author: Giovanni Mascali
published in: European Journal of Applied Mathematics
publication date: 2014-08-28T00:00:00Z
Mathematics Subject Classification ID: 78A35
Mathematics Subject Classification ID: 82D37
Mathematics Subject Classification ID: 35Q20
Mathematics Subject Classification ID: 76P05
zbMATH DE Number: 6335417
zbMATH Keywords: compound semiconductors
zbMATH Keywords: maximum entropy principle, energy dispersion relation
MaRDI profile type: Publication
cites work: The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models
cites work: Exact Maximum Entropy Closure of the Hydrodynamical Model for Si Semiconductors: The 8-Moment Case
cites work: A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands
cites work: Information Theory and Statistical Mechanics
cites work: Maximum entropy principle in relativistic radiation hydrodynamics. II: Compton and double Compton scattering
cites work: Maximisation of the entropy in non-equilibrium
cites work: Non parabolic band transport in semiconductors: closure of the moment equations
cites work: Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
full work available at URL: s0956792514000011
OpenAlex ID: W2329832822
review text: A microscopic model of charge transport in compound semiconductors is derived. The main scattering mechanisms in polar semiconductors are studied. The paper contains also a number of numerical results.
description: scientific article; zbMATH DE number 6335417