The mixed layer problem and quasi-neutral limit of the drift-diffusion model for semiconductors
A solution for a semiconductor drift-diffusion model is constructed for the case of Neumann boundary conditions with account of layers of all types: boundary layers, initial layers and so on. With the use of the obtained solution, the limit passage as \(\lambda \rightarrow 0\) is justified. It would be useful to continue this work also for the Dirichlet boundary conditions (at least, for electric potential).
scientific article; zbMATH DE number 6070866