The mixed layer problem and quasi-neutral limit of the drift-diffusion model for semiconductors
type: Item
instance of: scholarly article
zbMATH Open document ID: 1259.35022
DOI: 10.1137/110833270
published in: SIAM Journal on Mathematical Analysis
publication date: 2012-08-23T00:00:00Z
Mathematics Subject Classification ID: 35B25
Mathematics Subject Classification ID: 35B40
Mathematics Subject Classification ID: 35K57
Mathematics Subject Classification ID: 82D37
zbMATH DE Number: 6070866
zbMATH Keywords: multiple scaling asymptotic expansions
zbMATH Keywords: Neumann boundary conditions
MaRDI profile type: Publication
full work available at URL: https://doi.org/10.1137/110833270
OpenAlex ID: W1978123197
title: The mixed layer problem and quasi-neutral limit of the drift-diffusion model for semiconductors
author: Shu Wang
author: Ke Wang
review text: A solution for a semiconductor drift-diffusion model is constructed for the case of Neumann boundary conditions with account of layers of all types: boundary layers, initial layers and so on. With the use of the obtained solution, the limit passage as \(\lambda \rightarrow 0\) is justified. It would be useful to continue this work also for the Dirichlet boundary conditions (at least, for electric potential).
description: scientific article; zbMATH DE number 6070866