NEW POSSIBILITIES FOR OBTAINING STEEPLY NONLINEAR CURRENT–VOLTAGE CHARACTERISTICS IN SOME SEMICONDUCTOR STRUCTURES
type: Item
instance of: scholarly article
title: NEW POSSIBILITIES FOR OBTAINING STEEPLY NONLINEAR CURRENT–VOLTAGE CHARACTERISTICS IN SOME SEMICONDUCTOR STRUCTURES
zbMATH Open document ID: 1203.82112
DOI: 10.1142/S0217979210056128
published in: International Journal of Modern Physics B
publication date: 2010-12-28T00:00:00Z
full work available at URL: https://arxiv.org/abs/0905.2142
Mathematics Subject Classification ID: 82D37
zbMATH DE Number: 5830008
zbMATH Keywords: resonant tunneling structure
zbMATH Keywords: Schottky barrier
zbMATH Keywords: transmission rates
zbMATH Keywords: current-voltage characteristics
zbMATH Keywords: steep nonlinearity
MaRDI profile type: Publication
arXiv ID: 0905.2142
cites work: Q3331506
description: scientific article