Electron-phonon interaction in nanowires: a Monte Carlo study of the effect of the field
type: Item
instance of: scholarly article
title: Electron-phonon interaction in nanowires: a Monte Carlo study of the effect of the field
zbMATH Open document ID: 1211.82060
author: Sumit K. Garg
published in: Mathematics and Computers in Simulation
publication date: 2011-01-31T00:00:00Z
review text: This paper shows the investigations about electron-phonon interaction in nanowires basing on the Monte Carlo study of the effect of the field. It is based on the observation that the core elements in modern electronic devices (optical switchers, highly sensitive photo-FET's, etc.) are semiconductor quantum wires. The electronic characteristics of these devices are basically determined by the carrier transport in the wire. The carrier distribution is highly non-equlibrium so that besides the usual spatial evolution a fast process of thermal relaxation occurs, caused by energy dissipation from phonons. Some difficulties of this process description are connected with very small (c.a. nanometer) scales and the characteristic for the evolution process under consideration are the sub-picosecond thus, it requires a quantum mechanical description. The authors introduce a quantum-kinetic equation (Eq. (1)), whose derivation can be found in earlier work of some of the authors et al. [Wigner transport models of the electron-phonon kinetics in quantum wires, Phys. Rev. B 74, 035311 ) (2006)]. Basing on this proposal it is possible to introduce the following effects: {\parindent=7mm \begin{itemize}\item[(i)] the non-Markovian character of the equation introduced by the time integral that leads to retardation of the quantum evolution; \item[(ii)] the lack of energy conservation that causes the collisional broadening and appearance of carriers in the classically forbidden energy regions; \item[(iii)] the collisions with phonons have finite duration, which affects the carrier trajectories; \item[(iv)] the action of the electric field during the collision process -- the intra-collisional field effect (ICFE). \end{itemize}} In the case of preparation of generation simulators of transport processes occurring on femtosecond and nanometer scales the mentioned above problems should be taken into account. The study of the effects (i) -- (iii) was done in earlier work -- in this paper we h…
reviewed by: Dominik Strzałka
Mathematics Subject Classification ID: 82D37
Mathematics Subject Classification ID: 82C10
Mathematics Subject Classification ID: 81V10
Mathematics Subject Classification ID: 82B80
zbMATH DE Number: 5843123
zbMATH Keywords: Monte Carlo study
zbMATH Keywords: quantum-kinetic equation
zbMATH Keywords: semiconductor carriers
zbMATH Keywords: electron-phonon interaction
Wikidata QID: Q62600600
MaRDI profile type: Publication
full work available at URL: j.matcom.2009.09.006
OpenAlex ID: W2071308903
cites work: Large-Scale Scientific Computing
DBLP publication ID: journals/mcs/AtanassovGKNVR10
DOI: 10.1016/J.MATCOM.2009.09.006
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description: scientific article; zbMATH DE number 5843123