Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects
type: Item
instance of: scholarly article
title: Redistribution of dopant, implanted in a multilayer structure for production of a p-n-junction, during annealing radiative defects
zbMATH Open document ID: 1220.82154
author: E. L. Pankratov
published in: Physics Letters. A
publication date: 2011-09-02T00:00:00Z
Mathematics Subject Classification ID: 82D37
Mathematics Subject Classification ID: 30D05
zbMATH DE Number: 5945333
MaRDI profile type: Publication
full work available at URL: j.physleta.2007.10.058
OpenAlex ID: W1978013604
DOI: 10.1016/J.PHYSLETA.2007.10.058
description: scientific article; zbMATH DE number 5945333