Drift-Diffusion Model
type: Item
instance of: mathematical model
contains: Boltzmann Approximation for Electrons
contains: Boltzmann Approximation for Holes
contains: Continuity Equation for Electrons
contains: Continuity Equation for Holes
contains: Poisson Equation for the Electric Potential
contains: Dirichlet Boundary Condition for Electric Potential
contains: Dirichlet Boundary Condition for Electron Fermi Potential
contains: Dirichlet Boundary Condition for Hole Fermi Potential
contains: Neumann Boundary Condition for Electric Potential
contains: Neumann Boundary Condition for Electron Fermi Potential
contains: Neumann Boundary Condition for Hole Fermi Potential
discretized by: Scharfetter-Gummel Scheme
described by source: Numerical methods for drift-diffusion models
community: MathModDB
MaRDI profile type: MaRDI model profile
used by: Semiconductor Charge Neutrality
used by: Semiconductor Thermal Equilibrium
used by: Semiconductor Current Voltage
description: The drift-diffusion system describes the semi-classical transport of free electrons and holes in a self-consistent electric field using a drift-diffusion approximation. It became the standard model to describe the current flow in semiconductor devices such as diodes, transistors, LEDs, solar cells and lasers, as well as quantum nanostructures and organic semiconductors.
related URL: bstj29-4-560
description: mathematical model describing the semi-classical transport of free electrons and holes in a self-consistent electric field using a drift-diffusion approximation
alternative label: van Roosbroeck Model