Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models
type: Item
instance of: scholarly article
title: Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models
zbMATH Open document ID: 0994.82568
DOI: 10.1016/S0010-4655(02)00248-5
author: Yiming Li
author: Jam-Wem Lee
author: Ting-Wei Tang
author: Tien-Sheng Chao
author: Tan-Fu Lei
published in: Computer Physics Communications
publication date: 2002-09-12T00:00:00Z
Mathematics Subject Classification ID: 82D37
zbMATH DE Number: 1800076
zbMATH Keywords: MOS compacitor
MaRDI profile type: Publication
cites work: A Parallel Divide and Conquer Algorithm for the Symmetric Eigenvalue Problem on Distributed Memory Architectures
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full work available at URL: s0010-4655(02)00248-5
OpenAlex ID: W2081730103
description: scientific article; zbMATH DE number 1800076