Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile
type: Item
instance of: scholarly article
title: Quasi-neutral limit to the drift-diffusion models for semiconductors with physical contact-insulating boundary conditions and the general sign-changing doping profile
zbMATH Open document ID: 1185.35011
author: B. E. Eshmatov
published in: Nonlinear Analysis. Theory, Methods \& Applications. Series A: Theory and Methods
publication date: 2010-03-29T00:00:00Z
Mathematics Subject Classification ID: 35B25
Mathematics Subject Classification ID: 35B40
Mathematics Subject Classification ID: 35K57
Mathematics Subject Classification ID: 82D37
Mathematics Subject Classification ID: 35Q60
zbMATH DE Number: 5687524
zbMATH Keywords: contact-insulating boundary conditions
zbMATH Keywords: boundary layer
zbMATH Keywords: initial layer
zbMATH Keywords: one space dimension
zbMATH Keywords: entropy-energy method
MaRDI profile type: Publication
full work available at URL: j.na.2009.12.041
OpenAlex ID: W2013821937
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DOI: 10.1016/J.NA.2009.12.041
description: scientific article; zbMATH DE number 5687524