Pages that link to "Item:Q1007811"
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The following pages link to Three-dimensional modelling of GeSi growth in presence of axial and rotating magnetic fields (Q1007811):
Displaying 9 items.
- Numerical modeling of crystal growth under strong magnetic fields: an application to the travelling heater method (Q924824) (← links)
- Three-dimensional modelling of Ge\(_{1-x}\)Si\(_{x}\) by the travelling solvent method: the effect of rotation and misalignment of the sample (Q979613) (← links)
- Numerical simulation of LEC growth of InP crystal with an axial magnetic field (Q981329) (← links)
- Global simulation of a silicon Czochralski furnace in an axial magnetic field. (Q1423404) (← links)
- Numerical analysis of LEC growth of gaAs with an axial magnetic field (Q1858575) (← links)
- Macrosegregation during alloyed semiconductor crystal growth in strong axial and transverse magnetic fields (Q2486332) (← links)
- Dopant transport during semiconductor crystal growth in space with a steady magnetic field (Q2761451) (← links)
- Magnetic control of natural convection in the horizontal Bridgman configuration: symmetric and non-symmetric cross sections (Q2847493) (← links)
- Axisymmetric and 3-D Numerical Simulations of theEffects of a Static Magnetic Field on Dissolution of Siliconinto Germanium (Q2964910) (← links)
