Pages that link to "Item:Q1010033"
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The following pages link to Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations (Q1010033):
Displaying 5 items.
- A compact quantum surface potential model for a MOSFET device (Q988450) (← links)
- Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations (Q1010033) (← links)
- The influence of dependence of HEMT's model parameters on gate and drain voltages on upper boundary of LNA's linearity (Q1859968) (← links)
- Simple and accurate approaches to implement the complex trans-conductance suited for time-domain simulators for small-signal and large-signal table-based models (Q3406073) (← links)
- Modeling and designing silicon thin-film inductors and transformers using HSPICE for RFIC applications (Q4224370) (← links)