The influence of dependence of HEMT's model parameters on gate and drain voltages on upper boundary of LNA's linearity (Q1859968)
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scientific article; zbMATH DE number 1872170
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | The influence of dependence of HEMT's model parameters on gate and drain voltages on upper boundary of LNA's linearity |
scientific article; zbMATH DE number 1872170 |
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The influence of dependence of HEMT's model parameters on gate and drain voltages on upper boundary of LNA's linearity (English)
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20 February 2003
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high electron mobility transistor
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modelling
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nonlinear properties
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0.8306018
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0.77182794
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0.76530564
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0.7630458
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