Pages that link to "Item:Q1604436"
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The following pages link to 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle (Q1604436):
Displaying 28 items.
- Semiconductor device design using the \textsc{BiMADS} algorithm (Q401540) (← links)
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle (Q536374) (← links)
- Local-in-time well-posedness of a regularized mathematical model for silicon MESFET (Q638709) (← links)
- 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle (Q658896) (← links)
- Hydrodynamic simulation of a \(n^{+}-n-n^{+}\) silicon nanowire (Q738065) (← links)
- Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors (Q852566) (← links)
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme (Q870557) (← links)
- Global existence for the system of the macroscopic balance equations of charge transport in semiconductors (Q1771381) (← links)
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) (← links)
- A new approach to numerical simulation of charge transport in double gate-MOSFET (Q2008027) (← links)
- Quantum corrected hydrodynamic models for charge transport in graphene (Q2334334) (← links)
- Representation of the solution to a model problem in semiconductor physics (Q2480371) (← links)
- Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors (Q2499636) (← links)
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices (Q2726639) (← links)
- A hydrodynamical model for silicon bipolar devices (Q2819343) (← links)
- Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients (Q2838936) (← links)
- Asymptotic stability of the stationary solution for a new mathematical model of charge transport in semiconductors (Q2892174) (← links)
- Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle (Q2902820) (← links)
- On calculating the electric potential for 2D silicon transistor with a silicon oxide nanochannel (Q3082245) (← links)
- Study of the jump conditions for the 2D MEP hydrodynamical model of charge transport in semiconductors (Q3183279) (← links)
- Strong discontinuities for the 2-D MEP hydrodynamical model of charge transport in semiconductors (Q3506772) (← links)
- (Q3618972) (← links)
- Full hydrodynamic simulation of GaAs MESFETs (Q4458783) (← links)
- Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle (Q4672394) (← links)
- Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model (Q5066291) (← links)
- Simulation of Bipolar Charge Transport in Graphene by Using a Discontinuous Galerkin Method (Q5161647) (← links)
- Numerical simulation of rarefied supersonic flows using a fourth-order maximum-entropy moment method with interpolative closure (Q6119265) (← links)
