Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices (Q2726639)

A consistent hydrodynamical model for electron transport in silicon semiconductors, free of any fitting parameter, has been formulated by Anile and Romano on the basis of the maximum entropy principle, by considering the energy band described by the Kane dispersion relation. Explicit constitutive functions for fluxes and production terms in the macroscopic balance equations of density, crystal momentum, energy and energy flux have been obtained. Scatterings of electrons with non-poly optical phonons (both for intervalley and intravalley interactions), accoustic phonons and impurities have been taken into account.NEWLINENEWLINENEWLINEIn this article we show the link with other macroscopic models describing the motion of charge carriers. In particular, under suitable scaling assumptions, an energy transport model is recovered. An analysis of the formal properties is given by showing that the evolution equations form a hyperbolic system in the physically relevant region of the space of the dependent variables. At last, by using the numerical method developed by Liotta et. al. simulations for bulk silicon and \(n^+- n- n^+\) silicon diode are performed. The obtained results are in good agreement with the Monte Carlo data.