Pages that link to "Item:Q1775795"

The following pages link to Quantum-corrected drift-diffusion models for transport in semiconductor devices (Q1775795):

Displaying 31 items.

• Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
• A steady-state mathematical model for an EOS capacitor: the effect of the size exclusion (Q727491) (← links)
• An entropic quantum drift-diffusion model for electron transport in resonant tunneling diodes (Q870536) (← links)
• An accelerated monotone iterative method for the quantum-corrected energy transport model (Q939488) (← links)
• Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices (Q975119) (← links)
• Quantum-corrected drift-diffusion models: Solution fixed point map and finite element approximation (Q1005417) (← links)
• Nonstationary monotone iterative methods for nonlinear partial differential equations (Q1034643) (← links)
• A posteriori error control in numerical simulations of semiconductor nanodevices (Q1682685) (← links)
• A quantum drift-diffusion model and its use into a hybrid strategy for strongly confined nanostructures (Q1728012) (← links)
• A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation (Q1765427) (← links)
• A quantum corrected energy-transport model for nanoscale semiconductor devices (Q1777049) (← links)
• Quantum energy-transport and drift-diffusion models (Q1777939) (← links)
• A coupled Schrödinger drift-diffusion model for quantum semiconductor device simulations (Q1851269) (← links)
• A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) (← links)
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
• A quantum energy transport model for semiconductor device simulation (Q2249364) (← links)
• Solution map analysis of a multiscale drift-diffusion model for organic solar cells (Q2310706) (← links)
• Convergent finite element discretizations of the density gradient equation for quantum semiconductors (Q2378255) (← links)
• Numerical simulation of tunneling effects in nanoscale semiconductor devices using quantum corrected drift-diffusion models (Q2384186) (← links)
• An approach to the Gummel map by vector extrapolation methods (Q2458330) (← links)
• A finite-volume scheme for the multidimensional quantum drift-diffusion model for semiconductors (Q3097949) (← links)
• Approximate solutions to the quantum drift-diffusion model of semiconductors (Q3442212) (← links)
• Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle (Q3544555) (← links)
• Quantum High-Field Corrections to a Drift-Collision Balance Model of Semiconductor Transport (Q3612798) (← links)
• New solutions for the quantum drift–diffusion model of semiconductors (Q3654243) (← links)
• A REVIEW ON THE QUANTUM DRIFT DIFFUSION MODEL (Q4794380) (← links)
• ON A DISCRETE MODEL FOR QUANTUM TRANSPORT IN SEMI-CONDUCTOR DEVICES (Q4794384) (← links)
• (Q4847871) (← links)
• A uniform numerical method for semilinear reaction-diffusion problems with a boundary turning point (Q5961875) (← links)
• A Positivity-preserving Finite Element Method for Quantum Drift-diffusion Model (Q6049034) (← links)
• A finite element method with energy-adaptive grids for the coupled Schrödinger-Poisson-drift-diffusion model (Q6087959) (← links)