Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398)
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scientific article; zbMATH DE number 6140928
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| English | Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle |
scientific article; zbMATH DE number 6140928 |
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Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (English)
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4 March 2013
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This paper deals with the simulation of a nanoscale double-gate MOSFET by means of an energy-transport subband model for semiconductors. A key role in this model is played by the moment system derived from the Schrödinger-Poisson-Boltzmann system. The proposed expression of the entropy combines quantum effects and semi-classical transport by weighting the contribution of each subband with the square modulus of the envelope functions arising from the Schrödinger-Poisson subsystem. Numerical simulations illustrate the results developed in the present paper.
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quantum transport
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semiconductors
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hydrodynamical models
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