Pages that link to "Item:Q1873036"
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The following pages link to Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: A Monte Carlo simulation study. (Q1873036):
Displaying 4 items.
- Impact of strain relaxation of alGaN barrier layer on the performance of high Al-content AlGaN/GaN HEMT (Q851263) (← links)
- A self-consistent numerical method for simulation of quantum transport in high electron mobility transistor. I: The Boltzmann-Poisson-Schrödinger solver (Q1286257) (← links)
- Simulation of the hot‐carrier degradation in short channel transistors with high‐K dielectric (Q3585578) (← links)
- Simulation of submicron pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors (Q4537264) (← links)