Pages that link to "Item:Q2889645"
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The following pages link to The surface charging effects in three-dimensional simulation of the profiles of plasma-etched nanostructures (Q2889645):
Displaying 3 items.
- Computer simulation of charging the silicon dioxide surface and subsurface layers by electron bombardment (Q664976) (← links)
- Three-dimensional discharge simulation of inductively coupled plasma (ICP) etching reactor (Q941774) (← links)
- The breakdown voltage characteristics and the secondary electron production in direct current hydrogen discharges for the gaps ranging from \(1 \mu m\) to \(100 \mu \)m (Q1933233) (← links)