Pages that link to "Item:Q3556835"
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The following pages link to MONTE CARLO SIMULATION OF STEADY-STATE TRANSPORT IN SUBMICROMETER<font>InP</font>AND<font>GaAs</font>n<sup>+</sup>–i(n)–n<sup>+</sup>DIODE (Q3556835):
Displaying 3 items.
- Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements (Q2026636) (← links)
- Monte Carlo evaluation of the transport coefficients in a n<sup>+</sup> – n – n<sup>+</sup> silicon diode (Q4519080) (← links)
- Computational Science - ICCS 2004 (Q5712815) (← links)