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Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements - MaRDI portal

Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements (Q2026636)

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scientific article; zbMATH DE number 7350014
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English
Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements
scientific article; zbMATH DE number 7350014

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    Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements (English)
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    20 May 2021
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    drift velocity
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    GaN semiconductors
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    Boltzmann equation
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    heterostructures
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    phonons
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    satellite valleys
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