Pages that link to "Item:Q4331566"
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The following pages link to Simulation of MESFET device by streamline‐diffusion finite element methods (Q4331566):
Displaying 8 items.
- Local discontinuous Galerkin methods for moment models in device simulations: Performance assessment and two-dimensional results (Q881483) (← links)
- Simulation of semiconductor devices with a local numerical approach (Q1653574) (← links)
- Numerical solution of drift diffusion equations using 2D finite difference method: application to a strained MOSFET device (Q2864895) (← links)
- (Q3618972) (← links)
- MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES (Q3760198) (← links)
- (Q4298149) (← links)
- Full hydrodynamic simulation of GaAs MESFETs (Q4458783) (← links)
- Least-squares finite element formulation for hydrodynamic modeling of semiconductor devices. (Q5930708) (← links)