Pages that link to "Item:Q4509867"

The following pages link to Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure (Q4509867):

Displaying 32 items.

• Positivity preserving discretization of time dependent semiconductor drift-diffusion equations (Q450888) (← links)
• Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
• Lyapunov functionals, weak sequential stability, and uniqueness analysis for energy-transport systems (Q473492) (← links)
• On the simulation of the energy transmission in the forbidden band-gap of a spatially discrete double sine-Gordon system (Q548937) (← links)
• 2d numerical simulations of an electron-phonon hydrodynamical model based on the maximum entropy principle (Q658896) (← links)
• A domain partition approach to parallel adaptive simulation of dynamic threshold voltage MOSFET (Q696728) (← links)
• A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation (Q709393) (← links)
• An asymptotic-preserving scheme for the semiconductor Boltzmann equation toward the energy-transport limit (Q728812) (← links)
• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme (Q870557) (← links)
• Local discontinuous Galerkin methods for moment models in device simulations: Performance assessment and two-dimensional results (Q881483) (← links)
• An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices (Q1405166) (← links)
• Numerical methods for semiconductor heterostructures with band nonparabolicity (Q1408425) (← links)
• Numerical discretization of energy-transport model for semiconductors using high-order compact schemes (Q1614112) (← links)
• Hybrid coupling of a one-dimensional energy-transport Schrödinger system (Q1682384) (← links)
• A quantum corrected energy-transport model for nanoscale semiconductor devices (Q1777049) (← links)
• A relaxation scheme for the hydrodynamic equations for semiconductors (Q1861999) (← links)
• A discretized \(k\)-space method for charge transport in semiconductors (Q1902652) (← links)
• Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
• Analysis of numerical schemes for semiconductor energy-transport models (Q2041052) (← links)
• Numerical analysis of DDFV schemes for semiconductors energy-transport models (Q2064992) (← links)
• Discrete transparent boundary conditions for parabolic systems (Q2473090) (← links)
• A two-surface problem of the electron flow in a semiconductor on the basis of kinetic theory (Q2473358) (← links)
• An a priori error estimate for a monotone mixed finite-element discretization of a convection-diffusion problem (Q2480892) (← links)
• Energy transport in semiconductor devices (Q2929098) (← links)
• OPTIMAL DOPANT PROFILING BASED ON ENERGY-TRANSPORT SEMICONDUCTOR MODELS (Q3521649) (← links)
• Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models (Q3596552) (← links)
• SIMULATION OF THERMAL EFFECTS IN OPTOELECTRONIC DEVICES USING COUPLED ENERGY-TRANSPORT AND CIRCUIT MODELS (Q3604164) (← links)
• (Q4829053) (← links)
• Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model (Q5066291) (← links)
• Numerical Schemes for Semiconductors Energy-Transport Models (Q5117426) (← links)
• High-field approximations of the energy-transport model for semiconductors with non-parabolic band structure (Q5956224) (← links)
• A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices (Q5956354) (← links)