Pages that link to "Item:Q455240"
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The following pages link to Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells (Q455240):
Displaying 8 items.
- Simultaneous effects of laser field and hydrostatic pressure on the intersubband transitions in square and parabolic quantum wells (Q455108) (← links)
- Intense THz laser effects on off-axis donor impurities in GaAs-AlGaAs coaxial quantum well wires (Q455135) (← links)
- The effect of laser field intensity on polarizability in a quantum well (Q455171) (← links)
- Internal field relaxation and its effect on the energy spectrum and transport characteristics of a quantum well (Q694092) (← links)
- The effect of terahertz laser field on the optical absorption coefficients and refractive index changes of hyperbolic confinement quantum wells (Q2079077) (← links)
- Electric-field induced exponential enhancement of electromagnetic absorption in semiconductors at a strong magnetic field (Q2463092) (← links)
- Effect of electric field on the oscillator strength and cross-section for intersubband transition in a semiconductor quantum ring (Q2890915) (← links)
- Theoretical and numerical investigations of the energy states and absorption coefficients of quantum dots and quantum anti-dots in the presence of a magnetic field (Q6161774) (← links)
