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Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells - MaRDI portal

Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells (Q455240)

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scientific article; zbMATH DE number 6090327
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English
Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells
scientific article; zbMATH DE number 6090327

    Statements

    Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells (English)
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    4 October 2012
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    intense laser field
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    intersubband transitions
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    impurity binding energy
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